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MRF19090SR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
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Typical CDMA Performance: 1930 MHz, 26 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power ? 9 Watts Avg.
Power Gain ? 10 dB
Adjacent Channel Power ?
885 kHz: -47 dBc @ 30 kHz BW
1.25 MHz: -55 dBc @ 12.5 kHz BW
2.25 MHz: -55 dBc @ 1 MHz BW
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Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
270
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
LIFETIME BUY
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Document Number: MRF19090
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF19090SR3
1930-1990 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465C-02, STYLE 1
NI-880S
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Freescale Semiconductor, Inc., 2008. All rights reserved.
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